是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 11 weeks 1 day |
风险等级: | 1.6 | Is Samacsys: | N |
雪崩能效等级(Eas): | 50 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 33 A | 最大漏源导通电阻: | 0.002 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC015NE2LS5I | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC015NE2LS5I_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC016N03LSG | INFINEON |
获取价格 |
OptiMOS?3 Power-MOSFET | |
BSC016N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me | |
BSC016N03MSG | INFINEON |
获取价格 |
OptiMOS?3 M-Series Power-MOSFET | |
BSC016N03MSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Met | |
BSC016N04LSG | INFINEON |
获取价格 |
OptiMOS™3 Power-Transistor | |
BSC016N04LSG_11 | INFINEON |
获取价格 |
OptiMOSTM3 Power-Transistor | |
BSC016N06NS | INFINEON |
获取价格 |
New OptiMOS⢠40V and 60V | |
BSC016N06NSATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me |