BSC017N04NSGXT

更新时间： 2024-09-25 13:05:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
10页	384K
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中文翻译

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数据手册

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BSC017N04NSGXT 数据手册

BSC017N04NS G

OptiMOS™3 Power-Transistor

Product Summary

Features

V _DS

1.7

100

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

• N-channel

R _DS(on),max

I _D

mΩ

PG-TDSON-8

• Normal level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• 100% Avalanche tested

• Pb-free plating; RoHS compliant;

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC017N04NS G

PG-TDSON-8

017N04NS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

100

Parameter

Symbol Conditions

Unit

I _D

_GS=10 V, T _C=25 °C

Continuous drain current

_GS=10 V, T _C=100 °C

100

_GS=10 V, T _A=25 °C,

_thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

400

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=50 A, R _GS=25 Ω

295

±20

¹⁾J-STD20 and JESD22

Rev. 1.24

page 1

2009-10-22

12 3 4 5 6 7...10

中文翻译

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