是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 1.66 |
其他特性: | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 170 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 32 A |
最大漏源导通电阻: | 0.0019 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 400 A |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC014N06NS | INFINEON |
获取价格 |
New OptiMOS⢠40V and 60V | |
BSC014N06NSSC | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
BSC014N06NST | INFINEON |
获取价格 |
采用 SuperSO8 封装的 OptiMOS™ 5 功率 MOSFET 彰显出先进的技术 | |
BSC014N06NSTATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
BSC014NE2LSI | INFINEON |
获取价格 |
n-Channel Power MOSFET | |
BSC014NE2LSIATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Met | |
BSC015NE2LS5I | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC015NE2LS5I_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor | |
BSC016N03LSG | INFINEON |
获取价格 |
OptiMOS?3 Power-MOSFET | |
BSC016N03LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me |