Datasheet > BSC012N06NS

BSC012N06NS

更新时间： 2024-11-14 14:54:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	902K
描述
Infineon's?OptiMOS? MOSFETs in SuperSO8 package extend OptiMOS? 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.

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BSC012N06NS 数据手册

BSC012N06NS

MOSFET

OptiMOS^TM5ꢀPower-Transistor,ꢀ60ꢀV

TSON-8-3

Features

•ꢀOptimizedꢀforꢀsynchronousꢀrectification

•ꢀ100%ꢀavalancheꢀtested

•ꢀSuperiorꢀthermalꢀresistance

Pin 1

•ꢀN-channel

•ꢀ175°Cꢀrated

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀdueꢀtoꢀenlargedꢀsourceꢀinterconnection

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

S 1

8 D

7 D

S 2

S 3

G 4

6 D

5 D

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

V_DS

R_DS(on),max

I_D

1.2

mΩ

306

122

115

Q_OSS

Q_G(0V..10V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

BSC012N06NS

TSON-8-3

012N06N

Final Data Sheet

Rev.ꢀ2.3,ꢀꢀ2020-02-28

12 3 4 5 6 7...11

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与BSC012N06NS相关器件

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BSC014N04LSATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Me
BSC014N04LSI	INFINEON	获取价格	New OptiMOSâ¢ 40V and 60V
BSC014N04LSTATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 32A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Me
BSC014N06NS	INFINEON	获取价格	New OptiMOSâ¢ 40V and 60V