Datasheet > BLF1721M8LS200U

BLF1721M8LS200U

更新时间： 2024-09-15 22:07:43

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描述
RF FET LDMOS 65V 19DB SOT502B

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BLF1721M8LS200U 数据手册

BLF1721M8LS200

Power LDMOS transistor

Rev. 1 — 22 January 2016

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for various applications such as Industrial, Scientific and

Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; V_DS= 28 V; I_Dq= 1600 mA; in a class-AB demo circuit.

[1]

Test signal

CW RF

P_L(1dB)

(W)

G_p

_D

IMD3 ^[2]

(dBc)

35.4

26.9

(MHz)

(dB)

14.9

15.3

15.2

15.6

(%)

1700 to 1950

1900 to 2100

1700 to 1950

1900 to 2100

223.5

215.1

276.0

262.4

49.5

44.8

55.8

49.5

pulsed RF ^[3]

[1] at 1 dB compression.

[2] at V_DS= 28 V; I_Dq= 1600 mA; 2-tones; carrier spacing 5 MHz.

[3] t_p= 100 s;  = 10 %.

1.2 Features and benefits

 Excellent ruggedness

 High efficiency

 Low thermal resistance providing excellent thermal stability

 Designed for broadband operation

 Lower output capacitance for improved performance in Doherty applications

 Designed for low memory effects providing excellent pre-distortability

 Internally matched for ease of use

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for pulsed and CW applications in the 1700 MHz to 2100 MHz

frequency range such as ISM and industrial heating

12 3 4 5 6 7...14

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