Datasheet > BL450P04D

BL450P04D

更新时间： 2024-04-09 19:00:51

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	692K
描述
23A, 40V, 2.5W, P Channel, Power MOSFETs

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数据手册

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BL450P04D 数据手册

P-Channel Enhancement Mode MOSFET

BL450P04D

Features



Advanced high cell density Trench technology

Excellent C_dV/d_teffect decline

HBM: JESD22-A114-B: 1B

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

045P04D

BL450P04D

80 pcs / Tube or 2500 pcs / Tape & Reel

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-40

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Avalanche Energy, Single Pulsed ^*3

Power Dissipation (T_C= 25°C )

-23

-15

I_D

-6.6

-4.2

I_DM

-92

E_AS

°C

P_D

Power Dissipation (T_A= 25°C ) ^*1

3.1

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

2.5

°C /W

MTM0283A: November 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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