Datasheet > BL4N50F

BL4N50F

更新时间： 2024-11-25 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	280K
描述
4A, 500V, 28W, N Channel, Power MOSFETs

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BL4N50F 数据手册

Product specification

4A,500V N-Channel Power Mosfet

FEATURES

BL4N50F

R_DS(ON)=2.0Ω@ V_GS= 10V

High Switching Speed

Lead-free

100% Avalanche Tested

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL4N50F□

ITO-220AB

50/Tube

4N50F

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_D

Parameter

Value

500

±30

Units

Drain-Source voltage

Gate -Source voltage

Continuous Drain Current

I_DM

Pulsed Drain Current

Avalanche Energy

E_AS

Single Pulsed

216

V/ns

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

R_θJA

Thermal resistance,Junction-to-Ambient

Junction to Ambient

62.5

4.5

℃/W

℃

θJA

θJC

Junction to Case

T_J

Junction Temperature

+150

T_OPR, Tstg

Operating and Storage Temperature

-55 to +150

℃

MTM5004A

www.gmesemi.com

12 3

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