Datasheet > BL4N80D

BL4N80D

更新时间： 2024-04-09 18:58:45

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	769K
描述
4A, 800V, 36W, N Channel, Power MOSFETs

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数据手册

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BL4N80D 数据手册

N-Channel Enhancement Mode MOSFET

BL4N80I BL4N80D

Features



Proprietary new planar technology

Low gate charge minimize switching loss

Fast recovery body diode

Mechanical Data



Case: TO-251, TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-251

TO-252

Ordering Information

Part Number

BL4N80I

Package

TO-251

Shipping Quantity

Marking Code

4N80I

80 pcs / Tube

BL4N80D

TO-252

80pcs / Tube or 2500pcs / Tape & Reel

4N80D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

800

±30

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Pulsed Drain Current (V_GS= 10V) ^*1

Single Pulse Avalanche Energy ^*3

I_DM

E_AS

120

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

T_J

62.5

3.5

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

°C /W

-55 ~ +150

°C

T_STG

MTM0063A: June 2022

www.gmesemi.com

12 3 4 5 6

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