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BL4N80D PDF预览

BL4N80D

更新时间: 2024-11-28 17:00:47
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 769K
描述
4A, 800V, 36W, N Channel, Power MOSFETs

BL4N80D 数据手册

 浏览型号BL4N80D的Datasheet PDF文件第2页浏览型号BL4N80D的Datasheet PDF文件第3页浏览型号BL4N80D的Datasheet PDF文件第4页浏览型号BL4N80D的Datasheet PDF文件第5页浏览型号BL4N80D的Datasheet PDF文件第6页 
N-Channel Enhancement Mode MOSFET  
BL4N80I BL4N80D  
Features  
Proprietary new planar technology  
Low gate charge minimize switching loss  
Fast recovery body diode  
Mechanical Data  
Case: TO-251, TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,  
Method 208  
TO-251  
TO-252  
Ordering Information  
Part Number  
BL4N80I  
Package  
TO-251  
Shipping Quantity  
Marking Code  
4N80I  
80 pcs / Tube  
BL4N80D  
TO-252  
80pcs / Tube or 2500pcs / Tape & Reel  
4N80D  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
800  
±30  
4
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C)  
Pulsed Drain Current (VGS = 10V) *1  
Single Pulse Avalanche Energy *3  
A
IDM  
16  
A
EAS  
120  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C)  
PD  
RθJA  
RθJC  
TJ  
36  
62.5  
3.5  
W
Thermal Resistance Junction-to-Air  
Thermal Resistance Junction-to-Case  
Operating Junction Temperature Range  
Storage Temperature Range  
°C /W  
°C /W  
-55 ~ +150  
-55 ~ +150  
°C  
°C  
TSTG  
MTM0063A: June 2022  
www.gmesemi.com  
1

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