Datasheet > BL500P10TXD

BL500P10TXD

更新时间： 2024-11-25 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	486K
描述
29A, 100V, 83W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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BL500P10TXD 数据手册

P-Channel Enhancement Mode MOSFET

BL500P10TXD

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

JESD22-A114-B ESD rating of class 1A per human body model

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

BL500P10TXD

80 pcs / Tube & 2500 pcs / Tape & Reel

500P10TXD

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-100

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

-29

I_D

-18

I_DM

E_AS

P_D

-116

105

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.5

°C /W

MTM1212A: May 2023 [1.0]

www.gmesemi.com

12 3 4 5

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