Datasheet > BL500N10D

BL500N10D

更新时间： 2024-11-28 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	681K
描述
100V, N Channel MOSFETs

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中文翻译

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数据手册

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BL500N10D 数据手册

N-Channel Enhancement Mode MOSFET

BL500N10D

Features



Reliable and Rugged

Green device available

HBM: JESD22-A114-B: 1A

Applications



Synchronous Rectification

Motor Control

Portable equipment application

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

BL500N10D

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

500N10D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Unit

Value

V_DSS

V_GSS

100

Gate-to-Source Voltage

±20

Continuous Drain Current (T_C= 25°C)

Continuous Drain Current (T_C= 100°C)

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C)

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C)

I_D

5.2

3.3

I_DM

E_AS

P_D

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM1375A: September 2023 [2.1]

www.gmesemi.com

12 3 4 5 6

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