Datasheet > BL500P10TB

BL500P10TB

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	448K
描述
-100V, P Channel MOSFETs

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BL500P10TB 数据手册

P-Channel Enhancement Mode MOSFET

BL500P10TB

Features



Advanced Shielded-Gate Trench technology

Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

TO-263

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

BL500P10TB

50 pcs / Tube & 800 pcs / Tape & Reel

500P10TB

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-100

±20

-40

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current ^*2

I_D

-28

I_DM

-72

Single Pulse Avalanche Energy ^*3

E_AS

240

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJA

R_θJC

R_θJL

T_J

125

°C /W

°C

Thermal Resistance Junction-to-Air ^*5

Thermal Resistance Junction-to-Case ^*5

Thermal Resistance Junction-to-Lead ^*5

Operating Junction Temperature Range

Storage Temperature Range

0.77

-55 ~ +150

T_STG

°C

MTM0243A: April 2024 [1.0]

www.gmesemi.com

12 3 4 5

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