Datasheet > BL500P06XB

BL500P06XB

更新时间： 2024-11-25 17:01:35

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	709K
描述
-29A, -60V, 78W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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BL500P06XB 数据手册

P-Channel Enhancement Mode MOSFET

BL500P06XB

Features



Low R_DS(ON)

100% unclamped inductive switching

JESD22-A114-B ESD rating of class 2 per human body model

Typical Applications



Backlighting

Power management functions

DC-DC Converters

Mechanical Data



Case: TO-263



Molding Compound, UL Flammability Classification Rating 94V-0

Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202,

Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

500P06XB

BL500P06XB

50 pcs / Tube & 800 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

-60

Unit

Gate-to-Source Voltage

V_GSS

±20

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Continuous Drain Current (T_A= 25°C) ^*1

Continuous Drain Current (T_A= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

Power Dissipation (T_C= 25°C )

-29

-18

I_D

-6.7

-4.2

I_DM

E_AS

P_D

-116

°C

Operating Junction Temperature Range

Storage Temperature Range

T_J

-55 ~ +150

T_STG

MTM1294A: July 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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