Datasheet > BL4N65A

BL4N65A

更新时间： 2024-11-28 14:54:15

品牌	Logo	应用领域
上海贝岭 - BELLING		/
页数	文件大小	规格书
16页	1112K
描述
BL4N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

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BL4N65A 数据手册

BL4N65A

Power MOSFET

1．Description

BL4N65A, the silicon N-channel Enhanced

MOSFETs, is obtained by advanced MOSFET

technology which reduce the conduction loss,

improve switching performance and enhance the

avalanche energy. The transistor is suitable device

for SMPS, high speed switching and general

purpose applications.

KEY CHARACTERISTICS

Parameter

V_DS

I_D

Value

650

Unit

R_DS(ON).Typ

FEATURES

2.4

Ω



Fast Switching

Low Crss

100% avalanche tested

Improved dv/dt capability

RoHS product

APPLICATIONS

High frequency switching mode power supply



ORDERING INFORMATION

Ordering Codes

BL4N65A-P

BL4N65A-A

BL4N65A-U

BL4N65A-D

Package

Product Code

4N65A

Packing

Tube

Tape Reel

TO-220

TO-220F

TO-251

TO-252

BL4N65A-A

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year&Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BL4N65A:650V 4A

(2) A:TO-220F P:TO-220

U:TO-251 D：TO-252

BL4N65A

Rev 1.0

8/2019

www.belling.com.cn

Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited

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