Datasheet > BL4N60I

BL4N60I

更新时间： 2024-04-09 18:59:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	503K
描述
4A, 600V, 1.25W, N Channel, Power MOSFETs

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数据手册

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BL4N60I 数据手册

N-Channel Enhancement Mode MOSFET

BL4N60I

Features



Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

Mechanical Data



Case: TO-251

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-251

Ordering Information

Part Number

Package

TO-251

Shipping Quantity

Marking Code

BL4N60I

80 pcs / Tube

4N60I

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

600

±30

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_A= 25°C )

P_D

R_θJA

R_θJC

T_J

1.25

100

°C /W

°C

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

1.78

-55 ~ +150

T_STG

°C

MTM0735A: April 2022

www.gmesemi.com

12 3 4 5

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