Datasheet > BL4N60F

BL4N60F

更新时间： 2024-09-25 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	538K
描述
4A, 600V, 106W, N Channel, Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BL4N60F 数据手册

Product Specification

4A, 600V N-Channel Power Mosfet

FEATURES

BL4N60F



R_DS(ON)=2.5Ω@ V_GS= 10V

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance

( CRSS = typical 8.0 pF )



Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

ITO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL4N60F

ITO-220AB

50pcs / Tube

4N60F

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_D

Parameter

Value

Units

Drain-Source voltage

Gate -Source voltage

600

±30

4.0

Continuous Drain Current

Pulsed Drain Current

Avalanche Energy

I_DM

E_AS

E_AR

Single Pulsed

Repetitive

260

10.6

dv/dt

P_D

Peak Diode Recovery dv/dt

Power Dissipation

4.5

106

V/ns

R_θJA

Thermal resistance,Junction-to-Ambient

Junction Temperature

℃/W

℃

T_J

+150

T_OPR, Tstg

Operating and Storage Temperature

-55 to +150

℃

MTM5005A

www.gmesemi.com

12 3 4 5

中文翻译

下载PDF

与BL4N60F相关器件

型号	品牌	获取价格	描述	数据表
BL4N60I	BL Galaxy Electrical	获取价格	4A, 600V, 1.25W, N Channel, Power MOSFETs
BL4N65	BELLING	获取价格	BL4N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL4N65A	BELLING	获取价格	BL4N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL4N70F	BL Galaxy Electrical	获取价格	700V, N Channel, HV Planar MOSFETs
BL4N80	BELLING	获取价格	"BL4N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL4N80A	BELLING	获取价格	BL4N80A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL4N80D	BL Galaxy Electrical	获取价格	4A, 800V, 36W, N Channel, Power MOSFETs
BL4N80I	BL Galaxy Electrical	获取价格	4A, 800V, 36W, N Channel, Power MOSFETs
BL4N80K	BELLING	获取价格	BL4N80K, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology
BL4N90	BELLING	获取价格	"BL4N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology