Datasheet > BL4N60

BL4N60

更新时间： 2024-04-09 19:01:25

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	387K
描述
4A, 600V, 106W, N Channel,Power MOSFETs

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BL4N60 数据手册

Product Specification

N-Channel Enhancement Mode MOSFET

FEATURES

BL4N60



R_DS(ON)=2.5Ω@ V_GS= 10V

Ultra low gate charge ( typical 15 nC )

Low reverse transfer Capacitance ( CRSS = typical 8.0 pF )

Fast switching capability

Avalanche energy specified

Improved dv/dt capability, high ruggedness

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

BL4N60

TO-220AB

50pcs / Tube

4N60

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_DSS

V_GSS

I_AR

Parameter

Value

Units

Drain-Source voltage

Gate -Source voltage

600

±30

4.4

Avalanche Current (Note1)

Continuous Drain Current

Pulsed Drain Current

Avalanche Energy

I_D

4.0

I_DM

E_AS

E_AR

Single Pulsed(Note2)

Repetitive

260

10.6

dv/dt

P_D

Peak Diode Recovery dv/dt(Note3)

Power Dissipation

4.5

V/ns

106

R_θJA

R_θJC

Junction-to-Ambient

Junction-to-Case

62.5

℃/W

T_J

Junction Temperature

+150

℃

T_STG

Operating and Storage Temperature

-55 to +150

℃

Notes：

1、Absolute maximum ratings those values beyond which the device could be permanently damaged

2、Absolute maximum ratings are stress ratings only and functional device operation is not implied.

X139

Rev.A

www.gmesemi.com

12 3 4 5

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