Datasheet > BL4N50D

BL4N50D

更新时间： 2024-04-09 19:02:22

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	264K
描述
4A, 500V, 83W, N Channel,Power MOSFETs

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数据手册

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BL4N50D 数据手册

N-Channel Enhancement Mode MOSFET

BL4N50D

Features



High switching speed

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

BL4N50D

80 pcs / Tube & 2500 pcs / Tape & Reel

4N50D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

500

±30

Gate-to-Source Voltage

Continuous Drain Current

Pulsed Drain Current

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

1.5

°C/W

°C

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air

Operating Junction Temperature Range

Storage Temperature Range

62.5

-55 ~ +150

T_STG

°C

MTM0419A: February 2021

www.gmesemi.com

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