Datasheet > BFU550X

BFU550X

更新时间： 2024-03-03 10:11:06

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	283K
描述
NPN Wideband Silicon RF Transistor

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中文翻译

获取价格

数据手册

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BFU550X 数据手册

NXP Semiconductors

BFU550X

NPN wideband silicon RF transistor

Symbol Parameter

Conditions

Min Typ Max Unit

[2]

G_p(max)

NF_min

maximum power gain

minimum noise figure

I_C= 15 mA; V_CE= 8 V; f = 900 MHz

I_C= 1 mA; V_CE= 8 V; f = 900 MHz; Γ_S= Γ_opt

21.5

0.75

13.5

P_L(1dB)

output power at 1 dB gain

compression

I_C= 25 mA; V_CE= 8 V; Z_S= Z_L= 50 Ω; f = 900

MHz

dBm

[1] T_spis the temperature at the solder point of the collector lead.

[2] If K > 1 then G_p(max)is the maximum power gain. If K < 1 then G_p(max)= MSG.

2 Pinning information

Table 2.ꢀDiscrete pinning

Description

collector

emitter

Simplified outline

Graphic symbol

base

emitter

2, 4

aaa-010457

3 Ordering information

Table 3.ꢀOrdering information

Type number

Package

Name Description

Version

SOT143B

BFU550X

OM7963

plastic surface-mounted package; 4 leads

Customer evaluation kit for BFU520X, BFU530X and BFU550X ^[1]

[1] The customer evaluation kit contains the following:

• Unpopulated RF amplifier Printed-Circuit Board (PCB)

– Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration

– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)

– BFU520X, BFU530X and BFU550X samples

– USB stick with data sheets, application notes, models, S-parameter and

noise files

4 Marking

Table 4.ꢀMarking

Type number

Marking

Description

BFU550X

*TG

* = t : made in Malaysia

* = w : made in China

BFU550X

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 12 April 2019

2 / 21

123 4 5 6 7...21

中文翻译

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