生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.4 | 最大集电极电流 (IC): | 0.03 A |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | O-PRDB-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | RADIAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5800 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFQ70 | INFINEON |
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NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and teleco | |
BFQ71 | INFINEON |
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NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated swi | |
BFQ72 | INFINEON |
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NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collecto | |
BFQ73 | INFINEON |
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NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA A | |
BFQ73S | INFINEON |
获取价格 |
NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA A | |
BFQ74 | INFINEON |
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NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog | |
BFQ741 | NXP |
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TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power | |
BFQ75 | INFINEON |
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PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from | |
BFQ76 | INFINEON |
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PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up t | |
BFQ77 | ETC |
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TRANSISTOR | BJT | NPN | 20MA I(C) | SOT-173 |