Datasheet > BFQ790_17

BFQ790_17

更新时间： 2024-11-22 01:22:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
23页	491K
描述
High Linearity RF Medium Power Amplifier

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BFQ790_17 数据手册

BFQ790

High Linearity RF Medium Power Amplifier

Product description

The BFQ790 is a single stage high linearity high gain driver amplifier based on Infineon's reliable and cost

eﬀective NPN silicon germanium technology. Not internally matched, the BFQ790 provides flexibility in high

linearity applications.

Features

•

High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and

2650 MHz Class A application circuits

•

High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40%

collector eﬀiciency

•

High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit

Exceptional ruggedness up to VSWR 10:1 at output

High maximum RF input power PRFinmax of 18 dBm

100% test of proper die attach for reproducible thermal contact

100% DC and RF tested

Applications

•

high linear pre-driver amplifier, driver amplifier or power amplifier in the RF transmit chain

•

Commercial / industrial wireless infrastructure

ISM band wireless sensors

Internet of Things

•

Smart metering

•

Automotive radio links

•

Solid state Microwace ovens

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Device Information

Table 1

Device Information

Product Name / Ordering Code

Package

Pin Configuration

1 = B 2 = E

Marking

BFQ790 / BFQ790H6327XTSA1

SOT89

3 = C

Preliminary Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

Revision 2.0

2017-02-16

12 3 4 5 6 7...23

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