是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.69 | FET 技术: | JUNCTION |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFR101BTRL | YAGEO |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET | |
BFR101BTRL13 | YAGEO |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET | |
BFR106 | NXP |
获取价格 |
NPN 5 GHz wideband transistor | |
BFR106 | INFINEON |
获取价格 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplif | |
BFR106 | NJSEMI |
获取价格 |
Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB | |
BFR106,215 | NXP |
获取价格 |
BFR106 - NPN 5 GHz wideband transistor TO-236 3-Pin | |
BFR106/C,215 | NXP |
获取价格 |
BFR106 - NPN 5 GHz wideband transistor TO-236 3-Pin | |
BFR106/T1 | ETC |
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TRANSISTOR UHF BIPOLAR BREITBAND | |
BFR106_10 | INFINEON |
获取价格 |
NPN Silicon RF Transistor | |
BFR106_15 | JMNIC |
获取价格 |
NPN 5 GHz wideband transistor |