Datasheet > BFQ81

BFQ81

更新时间： 2024-11-08 22:32:03

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
10页	152K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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BFQ81 数据手册

BFQ81

Vishay Telefunken

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.

Observe precautions for handling.

Applications

RF amplifier up to 2 GHz, especially for mobile telephone.

Features

Small feedback capacitance

Low noise figure

Low cross modulation

13 581–2

94 9280

BFQ81 Marking: RA

Plastic case (SOT 23)

1 = Collector, 2 = Base, 3 = Emitter

Absolute Maximum Ratings

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature range

CBO

CEO

EBO

≤ 60 C

tot

200

150

–65 to +150

amb

stg

Maximum Thermal Resistance

amb

= 25 C, unless otherwise specified

Parameter

Test Conditions

Symbol

thJA

Value

450

Unit

K/W

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35 m Cu

Document Number 85023

Rev. 3, 20-Jan-99

www.vishay.de • FaxBack +1-408-970-5600

1 (10)

12 3 4 5 6 7...10

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