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BFQ81 PDF预览

BFQ81

更新时间: 2024-11-05 22:32:03
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
10页 152K
描述
Silicon NPN Planar RF Transistor

BFQ81 数据手册

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BFQ81  
Vishay Telefunken  
Silicon NPN Planar RF Transistor  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
RF amplifier up to 2 GHz, especially for mobile telephone.  
Features  
Small feedback capacitance  
Low noise figure  
Low cross modulation  
1
13 581–2  
94 9280  
2
3
BFQ81 Marking: RA  
Plastic case (SOT 23)  
1 = Collector, 2 = Base, 3 = Emitter  
Absolute Maximum Ratings  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
Value  
25  
16  
2
30  
Unit  
V
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Total power dissipation  
Junction temperature  
Storage temperature range  
V
CBO  
V
CEO  
V
EBO  
V
I
C
mA  
mW  
C
T
60 C  
P
tot  
200  
150  
–65 to +150  
amb  
T
j
T
stg  
C
Maximum Thermal Resistance  
T
amb  
= 25 C, unless otherwise specified  
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
450  
Unit  
K/W  
3
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm  
plated with 35 m Cu  
Document Number 85023  
Rev. 3, 20-Jan-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (10)  

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