Datasheet > BFQ81

BFQ81

更新时间： 2024-11-05 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管
页数	文件大小	规格书
7页	61K
描述
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications)

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BFQ81 数据手册

BFQ 81

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz

and broadband analog and digital

applications in telecommunications systems at

collector currents from 0.5 mA to 20 mA.

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFQ 81

RAs

Q62702-F1049

1 = B

2 = E

3 = C

SOT-23

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

≤

59 °C

280

Junction temperature

Ambient temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction - soldering point

thJS

325

K/W

1) T is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Dec-12-1996

12 3 4 5 6 7

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