Datasheet > BFR106_10

BFR106_10

更新时间： 2024-09-16 12:20:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	523K
描述
NPN Silicon RF Transistor

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中文翻译

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BFR106_10 数据手册

BFR106

NPN Silicon RF Transistor

• High linearity low noise RF transistor

• 22dBm OP1dB and 31dBm OIP3

@ 900MHz,8V,70mA

• For UHF/VHF applications

• Driver for multistage amplifiers

• For linear broadband and antenna amplifiers

• Collector design supports 5 V supply voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR106

Marking

R7s

Pin Configuration

2=E 3=C

Package

SOT23

1=B

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage,

CEO

T = 25°C

210

700

T = -55°C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

CES

CBO

EBO

°C

tot

T ≤ 73 °C

Junction temperature

Storage temperature

150

-55 ... 150

Stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 110

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note AN077 Thermal Resistance

thJA

2010-12-03

12 3 4 5 6 7...9

中文翻译

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