Datasheet > BFQ70

BFQ70

更新时间： 2024-11-05 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管电信
页数	文件大小	规格书
14页	342K
描述
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA)

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技术参数
数据手册

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BFQ70 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.03 A	配置：	Single
最高工作温度：	175 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.29 W	子类别：	Other Transistors
表面贴装：	NO

BFQ70 数据手册

NPN Silicon RF Transistor

BFQ 70

● For low-noise IF and broadband amplifiers in

antenna and telecommunications systems at

collector currents from 2 mA to 20 mA.

● Hermetically sealed ceramic package

● HiRel/Mil screening available.

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFQ 70

Q62702-F774

Cerex-X

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

CE0

CES

CB0

EB0

Collector-emitter voltage, V^BE= 0

Collector-base voltage

Emitter-base voltage

2.5

Collector current

Base current

Total power dissipation, T^S≤ 121 ˚C³⁾

Junction temperature

tot

300

175

˚C

Ambient temperature range

Storage temperature range

– 65 … + 175

stg

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 260

≤ 180

K/W

Junction - soldering point³⁾

For detailed dimensions see chapter Package Outlines.

Package mounted on alumina 16 mm × 25 mm × 0.7 mm.

TS is measured on the collector lead at the soldering point to the pcb.

12 3 4 5 6 7...14

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