Datasheet > BFQ75

BFQ75

更新时间： 2024-11-05 22:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管
页数	文件大小	规格书
3页	36K
描述
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.)

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技术参数
数据手册

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BFQ75 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	0.035 A	配置：	Single
最高工作温度：	175 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.29 W	子类别：	Other Transistors
表面贴装：	NO

BFQ75 数据手册

PNP Silicon RF Transistor

BFQ 75

● For broadband amplifiers up to 2 GHz

at collector currents from 5 mA to 30 mA.

● Complementary type: BFQ 72 (NPN).

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFQ 75

Q62702-F803

Cerec-X

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCE0

VCES

VCB0

VEB0

Collector-emitter voltage, VBE = 0

Collector-base voltage

Emitter-base voltage

Collector current

˚C

Total power dissipation, T^S≤ 112 ˚C³⁾

Junction temperature

tot

350

175

Ambient temperature range

Storage temperature range

– 65 … + 175

stg

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 260

≤ 180

K/W

Junction - soldering point³⁾

For detailed dimensions see chapter Package Outlines.

Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.

TS is measured on the collector lead at the soldering point to the pcb.

12 3

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