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BF720T3G PDF预览

BF720T3G

更新时间: 2024-02-28 06:26:22
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
4页 124K
描述
NPN Silicon Transistor

BF720T3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-261AA
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN针数:4
Reach Compliance Code:unknown风险等级:5.09
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):60 MHz
Base Number Matches:1

BF720T3G 数据手册

 浏览型号BF720T3G的Datasheet PDF文件第2页浏览型号BF720T3G的Datasheet PDF文件第3页浏览型号BF720T3G的Datasheet PDF文件第4页 
BF720T1G, BF720T3G  
NPN Silicon Transistor  
Features  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
MAXIMUM RATINGS  
NPN SILICON TRANSISTOR  
SURFACE MOUNT  
Rating  
Collector -- Emitter Voltage  
Collector -- Base Voltage  
Collector -- Emitter Voltage  
Emitter -- Base Voltage  
Collector Current  
Symbol  
Value  
300  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
mAdc  
W
V
CEO  
V
CBO  
V
CER  
V
EBO  
300  
300  
COLLECTOR 2,4  
5.0  
BASE  
1
I
100  
C
Total Power Dissipation up to T = 25C  
P
1.5  
A
D
Storage Temperature Range  
Junction Temperature  
T
--65 to +150  
150  
C  
stg  
EMITTER 3  
T
C  
J
THERMAL CHARACTERISTICS  
Characteristic  
MARKING  
DIAGRAM  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
θ
83.3  
C/W  
JA  
1
Junction--to--Ambient (Note 1)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
AYW  
DCG  
G
SOT--223 (TO--261)  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x  
CASE 318E  
STYLE 1  
2
1
0.059 in.; mounting pad for the collector lead min. 0.93 in .  
A
Y
= Assembly Location  
= Year  
W
= Work Week  
DC = Device Code  
G
= Pb--Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BF720T1G  
SOT--223  
(Pb--Free)  
1000 / Tape & Reel  
4000 / Tape & Reel  
BF720T3G  
SOT--223  
(Pb--Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
September, 2010 -- Rev. 7  
BF720T1/D  

BF720T3G 替代型号

型号 品牌 替代类型 描述 数据表
BF720T1G ONSEMI

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NPN Silicon Transistor

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