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BF722-Q PDF预览

BF722-Q

更新时间: 2024-11-25 11:14:35
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安世 - NEXPERIA /
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7页 181K
描述
NPN high voltage transistorProduction

BF722-Q 数据手册

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BF722-Q  
NPN high voltage transistor  
9 May 2023  
Product data sheet  
1. General description  
NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package.  
PNP complement: BF723-Q  
2. Features and benefits  
Low feedback capacitance  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
General purpose high voltage circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
250  
V
IC  
collector current  
DC current gain  
-
-
-
100  
-
mA  
hFE  
VCE = 20 V; IC = 25 mA; Tamb = 25 °C  
50  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
B
C
E
C
C
4
2
collector  
emitter  
B
3
1
2
3
E
4
collector  
SC-73 (SOT223)  
sym123  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
BF722-Q  
SC-73  
plastic, surface-mounted package with increased heatsink; SOT223  
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body  
 
 
 
 
 
 

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