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BF720T1G PDF预览

BF720T1G

更新时间: 2024-11-09 08:52:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 124K
描述
NPN Silicon Transistor

BF720T1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-261AA包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:8 weeks风险等级:0.48
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-261AA
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):60 MHzBase Number Matches:1

BF720T1G 数据手册

 浏览型号BF720T1G的Datasheet PDF文件第2页浏览型号BF720T1G的Datasheet PDF文件第3页浏览型号BF720T1G的Datasheet PDF文件第4页 
BF720T1G, BF720T3G  
NPN Silicon Transistor  
Features  
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS  
Compliant  
http://onsemi.com  
MAXIMUM RATINGS  
NPN SILICON TRANSISTOR  
SURFACE MOUNT  
Rating  
Collector -- Emitter Voltage  
Collector -- Base Voltage  
Collector -- Emitter Voltage  
Emitter -- Base Voltage  
Collector Current  
Symbol  
Value  
300  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
mAdc  
W
V
CEO  
V
CBO  
V
CER  
V
EBO  
300  
300  
COLLECTOR 2,4  
5.0  
BASE  
1
I
100  
C
Total Power Dissipation up to T = 25C  
P
1.5  
A
D
Storage Temperature Range  
Junction Temperature  
T
--65 to +150  
150  
C  
stg  
EMITTER 3  
T
C  
J
THERMAL CHARACTERISTICS  
Characteristic  
MARKING  
DIAGRAM  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
θ
83.3  
C/W  
JA  
1
Junction--to--Ambient (Note 1)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
AYW  
DCG  
G
SOT--223 (TO--261)  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x  
CASE 318E  
STYLE 1  
2
1
0.059 in.; mounting pad for the collector lead min. 0.93 in .  
A
Y
= Assembly Location  
= Year  
W
= Work Week  
DC = Device Code  
G
= Pb--Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BF720T1G  
SOT--223  
(Pb--Free)  
1000 / Tape & Reel  
4000 / Tape & Reel  
BF720T3G  
SOT--223  
(Pb--Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
September, 2010 -- Rev. 7  
BF720T1/D  

BF720T1G 替代型号

型号 品牌 替代类型 描述 数据表
BCP52 ONSEMI

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PNP 通用放大器
BCP53-10T1G ONSEMI

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PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BF720T1 ONSEMI

类似代替

NPN SILICON TRANSISTOR SURFACE MOUNT

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