Datasheet > BF721T1

BF721T1

更新时间： 2024-09-30 22:27:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管光电二极管
页数	文件大小	规格书
4页	78K
描述
PNP SILICON TRANSISTOR SURFACE MOUNT

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数据手册

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BF721T1 数据手册

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

COLLECTOR 2,4

PNP SILICON

TRANSISTOR

SURFACE MOUNT

BASE

EMITTER 3

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Value

–300

–5.0

–100

1.5

Unit

Vdc

CEO

CBO

CER

EBO

Vdc

CASE 318E-04, STYLE 1

SOT–223 (TO-261AA)

Vdc

Collector Current

mAdc

Watts

Total Power Dissipation up to

(1)

= 25°C

Storage Temperature Range

Junction Temperature

DEVICE MARKING

–65 to +150

150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance from Junction to

Ambient

83.3

°C/W

θJA

(1)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage

–300

–5.0

—

Vdc

nAdc

(BR)CEO

(I = –1.0 mAdc, I = 0)

Collector-Base Breakdown Voltage

(I = –100 µAdc, I = 0)

(BR)CBO

Collector-Emitter Breakdown Voltage

(I = –100 µAdc, R = 2.7 kΩ)

—

(BR)CER

(BR)EBO

Emitter-Base Breakdown Voltage

(I = –10 µAdc, I = 0)

—

Collector-Base Cutoff Current

(V = –200 Vdc, I = 0)

–10

CBO

Collector–Emitter Cutoff Current

CER

= –250 Vdc, R

= –200 Vdc, R

= 2.7 kΩ)

= 2.7 kΩ, T = 150°C)

—

–50

–10

nAdc

µAdc

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in .

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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