生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.75 |
风险等级: | 5.71 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.05 A | 基于收集器的最大容量: | 1.6 pF |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 60 MHz | VCEsat-Max: | 0.8 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BF721TC | ZETEX |
获取价格 |
Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epox | |
BF721TRL | NXP |
获取价格 |
TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BF721TRL13 | NXP |
获取价格 |
TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BF722 | NXP |
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NPN high-voltage transistors | |
BF722 | INFINEON |
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NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and swit | |
BF722 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BF722 | YAGEO |
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Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon | |
BF722 | NEXPERIA |
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NPN high voltage transistorProduction | |
BF722,115 | ETC |
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TRANS NPN 250V 0.1A SOT223 | |
BF722E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, SOT-2 |