BF721T1G

更新时间： 2024-10-01 08:52:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
4页	123K
描述
PNP Silicon Transistor

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中文翻译

获取价格

数据手册
替代型号

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BF721T1G 数据手册

BF721T1G

PNP Silicon Transistor

Features

 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS

Compliant

http://onsemi.com

MAXIMUM RATINGS

PNP SILICON TRANSISTOR

SURFACE MOUNT

Rating

Collector -- Emitter Voltage

Collector -- Base Voltage

Collector -- Emitter Voltage

Emitter -- Base Voltage

Collector Current

Symbol

Value

--300

-- 5 . 0

-- 5 0

Unit

Vdc

mAdc

CEO

CBO

CER

EBO

COLLECTOR 2,4

BASE

Total Power Dissipation up to T = 25C

(Note 1)

1.5

Storage Temperature Range

Junction Temperature

THERMAL CHARACTERISTICS

Characteristic

--65 to +150

150

C

stg

EMITTER 3

MARKING

DIAGRAM

Symbol

Max

Unit

Thermal Resistance,

83.3

C/W

Junction--to--Ambient (Note 1)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

AYW

DFG

SOT--223 (TO--261)

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

CASE 318E

STYLE 1

x 0.059 in.; mounting pad for the collector lead min. 0.93 in .

= Assembly Location

= Year

= Work Week

DF = Device Code

= Pb--Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

BF721T1G

SOT--223

(Pb--Free)

1000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.



Semiconductor Components Industries, LLC, 2010

Publication Order Number:

September, 2010 -- Rev. 9

BF721T1/D

12 3 4

中文翻译

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BF721T1G 替代型号

型号	品牌	替代类型	描述	数据表
BF721T1	ONSEMI	类似代替	PNP SILICON TRANSISTOR SURFACE MOUNT

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