Datasheet > BF721T1/D

BF721T1/D

更新时间： 2024-09-30 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	74K
描述
PNP Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BF721T1/D 数据手册

ON Semiconductort

BF721T1

ON Semiconductors Preferred Device

PNP Silicon Transistor

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Value

–300

–5.0

–100

1.5

Unit

Vdc

PNP SILICON

TRANSISTOR

SURFACE MOUNT

CEO

CBO

CER

EBO

Vdc

Collector Current

mAdc

Watts

Total Power Dissipation up to

(1)

T = 25°C

Storage Temperature Range

Junction Temperature

DEVICE MARKING

–65 to +150

150

°C

stg

CASE 318E-04, STYLE 1

SOT–223 (TO-261AA)

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR 2,4

Symbol

Max

Unit

BASE

Thermal Resistance from Junction to

Ambient

83.3

°C/W

(1)

EMITTER 3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage

–300

–5.0

—

Vdc

nAdc

(BR)CEO

(BR)CBO

(BR)CER

(BR)EBO

(I = –1.0 mAdc, I = 0)

Collector-Base Breakdown Voltage

(I = –100 µAdc, I = 0)

Collector-Emitter Breakdown Voltage

(I = –100 µAdc, R = 2.7 kΩ)

—

Emitter-Base Breakdown Voltage

(I = –10 µAdc, I = 0)

—

Collector-Base Cutoff Current

(V = –200 Vdc, I = 0)

–10

CBO

Collector–Emitter Cutoff Current

(V = –250 Vdc, R = 2.7 kΩ)

CER

—

–50

–10

nAdc

µAdc

(V = –200 Vdc, R = 2.7 kΩ, T = 150°C)

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in .

Preferred devices are ON Semiconductors recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 5

BF721T1/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与BF721T1/D相关器件

型号	品牌	获取价格	描述	数据表
BF721T1G	ONSEMI	获取价格	PNP Silicon Transistor
BF721T3	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 100MA I(C) \| SOT-223
BF721TA	ZETEX	获取价格	Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epox
BF721-TAPE-13	NXP	获取价格	TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BF721-TAPE-7	NXP	获取价格	TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BF721TC	ZETEX	获取价格	Power Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epox
BF721TRL	NXP	获取价格	TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BF721TRL13	NXP	获取价格	TRANSISTOR 0.05 A, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BF722	NXP	获取价格	NPN high-voltage transistors
BF722	INFINEON	获取价格	NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and swit