Datasheet > BF721T1/D

BF721T1/D

更新时间： 2024-11-26 23:35:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	74K
描述
PNP Silicon Transistor

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中文翻译

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数据手册

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BF721T1/D 数据手册

ON Semiconductort

BF721T1

ON Semiconductors Preferred Device

PNP Silicon Transistor

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Value

–300

–5.0

–100

1.5

Unit

Vdc

PNP SILICON

TRANSISTOR

SURFACE MOUNT

CEO

CBO

CER

EBO

Vdc

Collector Current

mAdc

Watts

Total Power Dissipation up to

(1)

T = 25°C

Storage Temperature Range

Junction Temperature

DEVICE MARKING

–65 to +150

150

°C

stg

CASE 318E-04, STYLE 1

SOT–223 (TO-261AA)

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR 2,4

Symbol

Max

Unit

BASE

Thermal Resistance from Junction to

Ambient

83.3

°C/W

(1)

EMITTER 3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage

–300

–5.0

—

Vdc

nAdc

(BR)CEO

(BR)CBO

(BR)CER

(BR)EBO

(I = –1.0 mAdc, I = 0)

Collector-Base Breakdown Voltage

(I = –100 µAdc, I = 0)

Collector-Emitter Breakdown Voltage

(I = –100 µAdc, R = 2.7 kΩ)

—

Emitter-Base Breakdown Voltage

(I = –10 µAdc, I = 0)

—

Collector-Base Cutoff Current

(V = –200 Vdc, I = 0)

–10

CBO

Collector–Emitter Cutoff Current

(V = –250 Vdc, R = 2.7 kΩ)

CER

—

–50

–10

nAdc

µAdc

(V = –200 Vdc, R = 2.7 kΩ, T = 150°C)

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in .

Preferred devices are ON Semiconductors recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 5

BF721T1/D

12 3 4 5 6 7 8

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