Datasheet > BF620

BF620

更新时间： 2024-09-13 08:52:23

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
2页	545K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BF620 数据手册

BF620

TRANSISTOR (NPN)

SOT-89

FEATURES

Low current (max. 50mA)

High voltage (max. 300V).

Video output stages.

1. BASE

2. COLLECTOR

3. EMITTER

Marking：DC

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

300

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

300

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

℃

P_C

500

T_J

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

300

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100μA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=200V, I_E=0

V_EB=5V, I_C=0

Emitter cut-off current

DC current gain

V_CE=20V, I_C=25mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=30mA, I_B=5mA

0.6

V_CE=10V, I_C=10mA, f=100MHz

MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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