Datasheet > BF621

BF621

更新时间： 2024-11-04 22:27:31

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描述
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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BF621 数据手册

SOT89 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BF621

ISSUE 3 – MARCH 2001

✪

FEATURES

High breakdown and low saturation voltage

APPLICATIONS

Suitable for video output stages in TV sets

Switching power supplies

COMPLEMENTARY TYPE –

BF620

PARTMARKING DETAIL –

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-300

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-300

-5

Peak Pulse Current

-100

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-50

P_tot

-1

T_j:T_stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX.

UNIT CONDITIONS.

Collector-Base

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-300

-5

I_C=-10µA, I_E=0

I_C=-1mA, I_B=0*

I_E=-100µA, I_C=0

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Colector Cut-Off Current

Emitter Cut-Off Current

-10

-20

µA

_CB=-200V, I_E=0

_CB=-200V, I_E=0 †

I_CER

-50

-10

µA

V_CE=-200V, R_BE=2.7KΩ

V_CE=-200V, R_BE=2.7KΩ †

I_EBO

-10

µA

V_EB=-5V, I_C=0

Collector-Emitter Saturation

Voltage

V_CE(sat)

-0.6

I_C=-30mA, I_B=-5mA*

Base-Emitter Saturation Voltage V_BE(sat)

-0.9

I_C=-20mA, I_B=-2mA*

I_C=-25mA, V_CE=-20V*

Static Forward

h_FE

Current Transfer Ratio

Transition Frequency

Output Capacitance

f_T

100 Typical

0.8 Typical

MHz I_C=-10mA, V_CE=-10V

f=100MHz

C_obo

V_CB=-30V, f=1MHz

†T_amb=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA92 datasheet.

TBA

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