Datasheet > BF620TC

BF620TC

更新时间： 2024-09-15 18:30:03

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描述
Transistor

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技术参数
数据手册

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BF620TC 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

BF620TC 数据手册

SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BF620

ISSUE 5 – MARCH 2001

✪

FEATURES

High breakdown and low saturation voltages

APPLICATIONS

Suitable for video output stages in TV sets

Switching power supplies

COMPLEMENTARY TYPE:

BF621

PARTMARKING DETAIL –

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

300

Collector-Emitter Voltage

Emitter-Base Voltage

300

Peak Pulse Current

100

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

T_j:T_stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

Collector-Base

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

300

I_C=10µA, I_E=0

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

I_C=1mA, I_B=0*

Emitter-Base Breakdown

Voltage

I_E=100µA, I_C=0

Collector Cut-Off Current

Colector Cut-Off Current

Emitter Cut-Off Current

µA

V_CB=200V, I_E=0

V_CB=200V, I_E=0 †

I_CER

µA

V_CE=200V, R_BE=2.7KΩ

V_CE=200V, R_BE=2.7KΩ †

I_EBO

V_EB=5V, I_C=0

µA

Collector-Emitter

V_CE(sat)

0.6

I_C=30mA, I_B=5mA*

I_C=20mA, I_B=2mA*

I_C=25mA, V_CE=20V*

Saturation Voltage

Base-Emitter

Saturation Voltage

V_BE(sat)

h_FE

0.9

Static Forward

Current Transfer Ratio

Transition Frequency

Output Capacitance

f_T

100 Typical MHz

0.8 Typical pF

I_C=10mA, V_CE=10V

f=100MHz

C_obo

V_CB=30V, f=1MHz

†T_amb=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA42 datasheet.

TBA

中文翻译

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