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BDW53D

更新时间： 2024-11-03 22:39:31
品牌 Logo 应用领域
POINN 晶体晶体管开关局域网
页数 文件大小 规格书
6页 107K
描述
NPN SILICON POWER DARLINGTONS

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中文翻译

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BDW53D 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.69
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：4 A集电极-发射极最大电压：120 V
配置：DARLINGTON最小直流电流增益 (hFE)：100
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

BDW53D 数据手册

 浏览型号BDW53D的Datasheet PDF文件第2页浏览型号BDW53D的Datasheet PDF文件第3页浏览型号BDW53D的Datasheet PDF文件第4页浏览型号BDW53D的Datasheet PDF文件第5页浏览型号BDW53D的Datasheet PDF文件第6页 
BDW53, BDW53A, BDW53B, BDW53C, BDW53D  
NPN SILICON POWER DARLINGTONS  
Copyright © 1997, Power Innovations Limited, UK  
AUGUST 1978 - REVISED MARCH 1997  
●
Designed for Complementary Use with  
BDW54, BDW54A, BDW54B, BDW54C and  
BDW54D  
TO-220 PACKAGE  
(TOP VIEW)  
●
●
●
40 W at 25°C Case Temperature  
4 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 750 at 3 V, 1.5 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BDW53  
45  
BDW53A  
BDW53B  
BDW53C  
BDW53D  
BDW53  
60  
Collector-base voltage (IE = 0)  
VCBO  
80  
V
100  
120  
45  
BDW53A  
BDW53B  
BDW53C  
BDW53D  
60  
Collector-emitter voltage (IB = 0) (see Note 1)  
VCEO  
80  
V
100  
120  
Emitter-base voltage  
VEBO  
IC  
5
V
A
Continuous collector current  
4
Continuous base current  
IB  
50  
40  
mA  
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Operating junction temperature range  
Ptot  
Ptot  
2
W
2
½LIC  
25  
mJ  
°C  
°C  
°C  
Tj  
Tstg  
TA  
-65 to +150  
-65 to +150  
-65 to +150  
Operating temperature range  
Operating free-air temperature range  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1
123456

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 		Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BDW54B BOURNS

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 		PNP SILICON POWER DARLINGTONS
BDW54B POINN

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 		PNP SILICON POWER DARLINGTONS
BDW54B-S BOURNS

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
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 		PNP SILICON POWER DARLINGTONS

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