Datasheet > BDW53B

BDW53B

更新时间： 2024-11-03 22:29:59

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NPN SILICON POWER DARLINGTONS

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BDW53B 数据手册

BDW53, BDW53A, BDW53B, BDW53C, BDW53D

NPN SILICON POWER DARLINGTONS

AUGUST 1978 - REVISED MARCH 1997

●

Designed for Complementary Use with

BDW54, BDW54A, BDW54B, BDW54C and

BDW54D

TO-220 PACKAGE

(TOP VIEW)

●

40 W at 25°C Case Temperature

4 A Continuous Collector Current

Minimum h of 750 at 3 V, 1.5 A

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BDW53

BDW53A

BDW53B

BDW53C

BDW53D

BDW53

Collector-base voltage (I_E= 0)

V_CBO

100

120

BDW53A

BDW53B

BDW53C

BDW53D

Collector-emitter voltage (I_B= 0) (see Note 1)

V_CEO

100

120

Emitter-base voltage

V_EBO

I_C

Continuous collector current

Continuous base current

I_B

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

Operating junction temperature range

P_tot

½LI_C

°C

T_j

T_stg

T_A

-65 to +150

Operating temperature range

Operating free-air temperature range

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 5 mA, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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