BDW47G

更新时间： 2024-11-03 22:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	78K
描述
Darlington Complementary Silicon Power Transistors

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中文翻译

获取价格

数据手册
替代型号

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BDW47G 数据手册

BDW42* − NPN, BDW46,

BDW47* − PNP

Preferred Device

Darlington Complementary

Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP

Darlington transistors are designed for general purpose and low speed

switching applications.

http://onsemi.com

Features

15 A DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 V, 85 W

• Pb−Free Package is Available**

• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.

• Collector Emitter Sustaining Voltage @ 30 mAdc:

= 80 Vdc (min) − BDW46

CEO(sus)

100 Vdc (min.) − BDW42/BDW47

MARKING

DIAGRAM

• Low Collector Emitter Saturation Voltage

CE(sat)

= 2.0 Vdc (max) @ I = 5.0 Adc

3.0 Vdc (max) @ I = 10.0 Adc

• Monolithic Construction with Built−In Base Emitter Shunt resistors

• TO−220AB Compact Package

TO−220AB

CASE 221A

STYLE 1

BDWxx

YYWW

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

Vdc

BDW46

BDW42, BDW47

Collector-Base Voltage

100

xx = 42, 46 or 47

YY = Year

WW = Work Week

Vdc

BDW46

BDW42, BDW47

100

Emitter-Base Voltage

Collector Current

Base Current

5.0

Vdc

Adc

ORDERING INFORMATION

0.5

†

Device

Package

Shipping

Total Device Dissipation

BDW42

TO−220AB

50 Units/Rail

@ T = 25°C

Derate above 25°C

0.68

W/°C

BDW46

BDW47

BDW47G

TO−220AB

50 Units/Rail

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

TO−220AB

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance,

Junction−to−Case

Symbol

Max

Unit

*Preferred devices are ON Semiconductor recommended

choices for future use and best overall value

1.47

°C/W

**For additional information on our Pb−Free strategy and soldering details,

please download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 11

BDW42/D

12 3 4 5 6 7 8

中文翻译

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BDW47G 替代型号

型号	品牌	替代类型	描述	数据表
2N6042G	ONSEMI	类似代替	Plastic Medium−Power Complementary Silicon Transistors
BDX54CG	ONSEMI	类似代替	Plastic Medium-Power Complementary Silicon Transistors

与BDW47G相关器件

型号	品牌	获取价格	描述	数据表
BDW47L	MOTOROLA	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47N	MOTOROLA	获取价格	Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDW47S	MOTOROLA	获取价格	Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDW47T	ONSEMI	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47U	MOTOROLA	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47U2	MOTOROLA	获取价格	15 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47UA	MOTOROLA	获取价格	15 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47W	MOTOROLA	获取价格	15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BDW47WD	MOTOROLA	获取价格	Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plas
BDW48	MOTOROLA	获取价格	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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