Datasheet > BDW48

BDW48

更新时间： 2024-01-02 08:35:17

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	227K
描述
Silicon PNP Darlington Power Transistor

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BDW48 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDW48

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -120V(Min)

·High DC Current Gain

: h_FE= 1000(Min) @I_C= -5A

·Low Collector Saturation Voltage

: V_CE(sat)= -2.0V(Max.)@ I_C= -5.0A

= -3.0V(Max.)@ I_C= -10A

·Complement to Type BDW43

APPLICATIONS

·Designed for general purpose and low speed switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-120

-5

UNIT

Collector Current-Continuous

Base Current-Continuous

-15

I_B

-0.5

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.47

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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