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BDW51B PDF预览

BDW51B

更新时间: 2024-11-04 06:41:59
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无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 203K
描述
Silicon NPN Power Transistor

BDW51B 数据手册

 浏览型号BDW51B的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BDW51/A/B/C  
DESCRIPTION  
·Collector Current -IC= 15A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 45V(Min)- BDW51; 60V(Min)- BDW51A  
80V(Min)- BDW51B; 100V(Min)- BDW51C  
·Complement to Type BDW52/A/B/C  
APPLICATIONS  
·Designed for use in power linear and switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
45  
UNIT  
BDW51  
BDW51A  
BDW51B  
BDW51C  
BDW51  
60  
Collector-Base  
Voltage  
VCBO  
V
80  
100  
45  
BDW51A  
BDW51B  
BDW51C  
60  
Collector-Emitter  
Voltage  
VCEO  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage  
V
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
15  
20  
A
7
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
125  
200  
-65~200  
W
Junction Temperature  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.4  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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