Datasheet > BDW51C

BDW51C

更新时间： 2024-11-04 06:41:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	110K
描述
Silicon NPN Power Transistors

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BDW51C 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BDW51C

DESCRIPTION

·With TO-3 package

·Complement to type BDW52C

·Excellent safe operating area

APPLICATIONS

·For use in power linear and

switching applications

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

100

UNIT

Open base

Open collector

I_CM

Collector current-peak

Base current

I_B

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

200

-65~200

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

1.4

ꢀ/W

12 3

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与BDW51C相关器件

型号	品牌	获取价格	描述	数据表
BDW52	ISC	获取价格	Silicon PNP Power Transistor
BDW52	SEME-LAB	获取价格	Bipolar PNP Device
BDW52	CENTRAL	获取价格	Power Transistors
BDW52A	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package
BDW52A	CENTRAL	获取价格	Power Transistors
BDW52A	ISC	获取价格	Silicon PNP Power Transistor
BDW52ALEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2
BDW52B	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
BDW52B	CENTRAL	获取价格	Power Transistors
BDW52B	ISC	获取价格	Silicon PNP Power Transistor