BDW51

更新时间： 2024-01-03 23:31:10

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	203K
描述
Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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BDW51 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

BDW51 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDW51/A/B/C

DESCRIPTION

·Collector Current -I_C= 15A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 45V(Min)- BDW51; 60V(Min)- BDW51A

80V(Min)- BDW51B; 100V(Min)- BDW51C

·Complement to Type BDW52/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW51

BDW51A

BDW51B

BDW51C

BDW51

Collector-Base

Voltage

V_CBO

100

BDW51A

BDW51B

BDW51C

Collector-Emitter

Voltage

V_CEO

100

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

125

200

-65~200

℃

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.4

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与BDW51相关器件

型号	品牌	获取价格	描述	数据表
BDW51A	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BDW51A	CENTRAL	获取价格	Power Transistors
BDW51A	ISC	获取价格	Silicon NPN Power Transistor
BDW51ALEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
BDW51B	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BDW51B	CENTRAL	获取价格	Power Transistors
BDW51B	ISC	获取价格	Silicon NPN Power Transistor
BDW51BLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
BDW51C	SEME-LAB	获取价格	Bipolar NPN Device
BDW51C	CENTRAL	获取价格	Power Transistors