BDW51A

更新时间： 2024-11-04 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	203K
描述
Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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BDW51A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

BDW51A 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDW51/A/B/C

DESCRIPTION

·Collector Current -I_C= 15A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 45V(Min)- BDW51; 60V(Min)- BDW51A

80V(Min)- BDW51B; 100V(Min)- BDW51C

·Complement to Type BDW52/A/B/C

APPLICATIONS

·Designed for use in power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW51

BDW51A

BDW51B

BDW51C

BDW51

Collector-Base

Voltage

V_CBO

100

BDW51A

BDW51B

BDW51C

Collector-Emitter

Voltage

V_CEO

100

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

125

200

-65~200

℃

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.4

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与BDW51A相关器件

型号	品牌	获取价格	描述	数据表
BDW51ALEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
BDW51B	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BDW51B	CENTRAL	获取价格	Power Transistors
BDW51B	ISC	获取价格	Silicon NPN Power Transistor
BDW51BLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
BDW51C	SEME-LAB	获取价格	Bipolar NPN Device
BDW51C	CENTRAL	获取价格	Power Transistors
BDW51C	ISC	获取价格	Silicon NPN Power Transistor
BDW51C	SAVANTIC	获取价格	Silicon NPN Power Transistors
BDW52	ISC	获取价格	Silicon PNP Power Transistor