Datasheet > BD787

BD787

更新时间： 2024-11-04 06:41:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	225K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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BD787 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD787

DESCRIPTION

·DC Current Gain-

: h_FE= 40~250(Min)@ I_C= 0.2A

·Collector-Emitter Sustaining Voltage -

: V_CEO(SUS)= 60V(Min)

·Complement to type BD788

APPLICATIONS

·Designed for low power audio amplifier and low current,

high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

I_CM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

8.34

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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