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BD788 PDF预览

BD788

更新时间: 2024-11-03 22:39:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 151K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

BD788 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-225包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.41
最大集电极电流 (IC):4 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-225JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

BD788 数据手册

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Order this document  
by BD787/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for lower power audio amplifier and low current, high–speed switching  
applications.  
4 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Low Collector–Emitter Sustaining Voltage —  
60 Vdc (Min) — BD787, BD788  
V
CEO(sus)  
High Current–Gain — Bandwidth Product —  
= 50 MHz (Min) @ I = 100 mAdc  
f
T
C
60 VOLTS  
15 WATTS  
Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc  
MAXIMUM RATINGS  
BD787  
BD788  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
60  
80  
6.0  
Collector Current — Continous  
— Peak  
4.0  
8.0  
Adc  
Adc  
I
C
CASE 77–08  
TO–225AA TYPE  
Base Current  
I
1.0  
Adc  
B
Total Power Dissipation @ T = 25°C  
Derate Above 25 C  
15  
0.12  
Watts  
W/ C  
C
P
D
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
8.34  
C/W  
θJC  
16  
12  
1.6  
1.2  
0.8  
8.0  
4.0  
0
0.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
REV 7  
Motorola, Inc. 1995

BD788 替代型号

型号 品牌 替代类型 描述 数据表
BD788G ONSEMI

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