Order this document
by BD789/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for low power audio amplifier and low–current, high speed switching
applications.
•
High Collector–Emitter Sustaining Voltage —
V
V
= 80 Vdc (Min) — BD789, BD790
= 100 Vdc (Min) — BD791, BD792
CEO(sus)
CEO(sus)
•
•
•
High DC Current Gain @ I = 200 mAdc
*Motorola Preferred Device
C
h
= 40–250
FE
Low Collector–Emitter Saturation Voltage —
= 0.5 Vdc (Max) @ I = 500 mAdc
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
V
CE(sat)
High Current Gain — Bandwidth Product —
= 40 MHz (Min) @ I = 100 mAdc)
C
f
T
C
80, 100 VOLTS
15 WATTS
*MAXIMUM RATINGS
BD789
BD790
BD791
BD792
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
80
80
100
100
V
CB
V
EBO
6.0
Collector Current — Continuous
— Peak
I
C
4.0
8.0
Base Current
I
B
1.0
Adc
CASE 77–08
TO–225AA TYPE
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
15
0.12
Watts
W/ C
Operating and Storage Junction
Temperature Range
T ,T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
8.34
C/W
θJC
16
12
1.6
1.2
0.8
0.4
0
8.0
4.0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1