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BD790 PDF预览

BD790

更新时间: 2022-11-29 18:32:08
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 179K
描述
Complementary Plastic Silicon Power Transistors

BD790 数据手册

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Order this document  
by BD789/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for low power audio amplifier and low–current, high speed switching  
applications.  
High Collector–Emitter Sustaining Voltage —  
V
V
= 80 Vdc (Min) — BD789, BD790  
= 100 Vdc (Min) — BD791, BD792  
CEO(sus)  
CEO(sus)  
High DC Current Gain @ I = 200 mAdc  
*Motorola Preferred Device  
C
h
= 40–250  
FE  
Low Collector–Emitter Saturation Voltage —  
= 0.5 Vdc (Max) @ I = 500 mAdc  
4 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
V
CE(sat)  
High Current Gain — Bandwidth Product —  
= 40 MHz (Min) @ I = 100 mAdc)  
C
f
T
C
80, 100 VOLTS  
15 WATTS  
*MAXIMUM RATINGS  
BD789  
BD790  
BD791  
BD792  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
80  
80  
100  
100  
V
CB  
V
EBO  
6.0  
Collector Current — Continuous  
— Peak  
I
C
4.0  
8.0  
Base Current  
I
B
1.0  
Adc  
CASE 77–08  
TO–225AA TYPE  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
15  
0.12  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T ,T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
8.34  
C/W  
θJC  
16  
12  
1.6  
1.2  
0.8  
0.4  
0
8.0  
4.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

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