Datasheet > BD791T

BD791T

更新时间： 2024-02-06 21:58:40

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		局域网开关晶体管
页数	文件大小	规格书
8页	126K
描述
4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN

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BD791T 数据手册

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by BD791/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

. . . designed for low power audio amplifier and low–current, high speed switching

applications.

4 AMPERE

POWER TRANSISTOR

SILICON

•

High Collector–Emitter Sustaining Voltage —

= 100 Vdc (Min)

CEO(sus)

High DC Current Gain @ I = 200 mAdc

100 VOLTS

15 WATTS

= 40–250

Low Collector–Emitter Saturation Voltage —

= 0.5 Vdc (Max) @ I = 500 mAdc

CE(sat)

High Current Gain — Bandwidth Product —

= 40 MHz (Min) @ I = 100 mAdc)

*MAXIMUM RATINGS

Rating

Symbol

Max

100

6.0

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

EBO

CASE 77–09

TO–225AA TYPE

Collector Current — Continuous

— Peak

4.0

8.0

Base Current

1.0

Adc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

Operating and Storage Junction

Temperature Range

T ,T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.34

C/W

θJC

1.6

1.2

0.8

0.4

8.0

4.0

100

120

140

160

T, TEMPERATURE (

°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁸r Power Transistor Device Data

12 3 4 5 6 7 8

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