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BD797 PDF预览

BD797

更新时间: 2024-11-29 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 225K
描述
Silicon NPN Power Transistor

BD797 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

BD797 数据手册

 浏览型号BD797的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BD797  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 60V(Min.)  
·Low Saturation Voltage  
·Complement to Type BD798  
APPLICATIONS  
·Designed for a wide variety of medium-power switching and  
amplifier applications , such as series and shunt regulators  
and driver and output stages of high-fidelity amplifiers.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
60  
60  
V
5
V
Collector Curent-Continuous  
Base Current-Continuous  
8
3
A
IB  
A
Collector Power Dissipation  
TC=25  
PC  
65  
W
Tj  
Junction Temperature  
150  
-55~150  
Storage Ttemperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.92  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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