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BD791/D PDF预览

BD791/D

更新时间: 2024-01-20 23:23:40
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 63K
描述
NPN Plastic Silicon Power Transistor

BD791/D 技术参数

生命周期:Transferred零件包装代码:TO-225AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.31最大集电极电流 (IC):4 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-225AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

BD791/D 数据手册

 浏览型号BD791/D的Datasheet PDF文件第2页浏览型号BD791/D的Datasheet PDF文件第3页浏览型号BD791/D的Datasheet PDF文件第4页浏览型号BD791/D的Datasheet PDF文件第5页浏览型号BD791/D的Datasheet PDF文件第6页浏览型号BD791/D的Datasheet PDF文件第7页 
ON Semiconductort  
NPN Plastic Silicon Power  
Transistor  
BD791  
ON Semiconductor Preferred Device  
. . . designed for low power audio amplifier and low–current, high  
speed switching applications.  
4 AMPERE  
POWER TRANSISTOR  
SILICON  
High Collector–Emitter Sustaining Voltage —  
V
= 100 Vdc (Min)  
CEO(sus)  
High DC Current Gain @ I = 200 mAdc  
C
100 VOLTS  
15 WATTS  
h
FE  
= 40–250  
Low Collector–Emitter Saturation Voltage —  
= 0.5 Vdc (Max) @ I = 500 mAdc  
V
CE(sat)  
C
High Current Gain — Bandwidth Product —  
f = 40 MHz (Min) @ I = 100 mAdc)  
T
C
*MAXIMUM RATINGS  
Rating  
Symbol  
Max  
100  
100  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
CASE 77–09  
TO–225AA TYPE  
V
EBO  
Collector Current — Continuous  
— Peak  
I
C
4.0  
8.0  
Base Current  
I
B
1.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
15  
0.12  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T ,T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
8.34  
_C/W  
θ
JC  
16  
1.6  
1.2  
0.8  
0.4  
0
12  
8.0  
4.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BD791/D  

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